Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
Identifieur interne : 000600 ( Russie/Analysis ); précédent : 000599; suivant : 000601Study of high power GaAs-based laser diodes operation and failure by cross-sectional electrostatic force microscopy
Auteurs : RBID : Pascal:04-0039193Descripteurs français
- Pascal (Inist)
- Laser semiconducteur, Diode laser, Etude expérimentale, Laser puissance, Laser SCH, Laser puits quantique, Composé binaire, Composé ternaire, Gallium arséniure, Indium arséniure, Aluminium arséniure, Laser InGaAs/AlGaAs/GaAs, InGaAs, As Ga In, AlGaAs, Al As Ga, GaAs, As Ga, 4255P, Microscopie force électrostatique.
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Pascal:04-0039193Le document en format XML
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<author><name sortKey="Ankudinov, A" uniqKey="Ankudinov A">A. Ankudinov</name>
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<author><name sortKey="Titkov, A" uniqKey="Titkov A">A. Titkov</name>
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<author><name sortKey="Laiho, R" uniqKey="Laiho R">R. Laiho</name>
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<term>Binary compounds</term>
<term>Electrostatic force microscopy</term>
<term>Experimental study</term>
<term>Gallium arsenides</term>
<term>High-power lasers</term>
<term>Indium arsenides</term>
<term>Laser diodes</term>
<term>Quantum well lasers</term>
<term>SCH lasers</term>
<term>Semiconductor lasers</term>
<term>Ternary compounds</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Laser semiconducteur</term>
<term>Diode laser</term>
<term>Etude expérimentale</term>
<term>Laser puissance</term>
<term>Laser SCH</term>
<term>Laser puits quantique</term>
<term>Composé binaire</term>
<term>Composé ternaire</term>
<term>Gallium arséniure</term>
<term>Indium arséniure</term>
<term>Aluminium arséniure</term>
<term>Laser InGaAs/AlGaAs/GaAs</term>
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<term>As Ga In</term>
<term>AlGaAs</term>
<term>Al As Ga</term>
<term>GaAs</term>
<term>As Ga</term>
<term>4255P</term>
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<s9>ed.</s9>
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<s5>14</s5>
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<s5>76</s5>
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<s5>77</s5>
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<s4>INC</s4>
<s5>78</s5>
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<s4>INC</s4>
<s5>79</s5>
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<fC03 i1="17" i2="3" l="FRE"><s0>GaAs</s0>
<s4>INC</s4>
<s5>80</s5>
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<fC03 i1="18" i2="3" l="FRE"><s0>As Ga</s0>
<s4>INC</s4>
<s5>81</s5>
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<fC03 i1="19" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
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<s5>91</s5>
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<s4>CD</s4>
<s5>96</s5>
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